Toshiba Semiconductor HN2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HN2C01FU	Toshiba Semiconductor	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
2	HN2C10FU	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
3	HN2C11FU	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE TRANSISTOR
4	HN2C12FU	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
5	HN2V02H	Toshiba Semiconductor	EPITAXIAL PLANAR TYPE (AM RADIO BAND TUNING APPLICATIONS)
6	HN2A26FS	Toshiba Semiconductor	Frequency General-Purpose Amplifier Applications lectrical Characteristics (Ta = 25°C) www.DataSheet4U.com Characteristic Symbol ICBO IEBO hFE(Note) VCE (sat) fT Cob Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −6 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCE = −10 V, IC = −1 mA VCB =