| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
Silicon N-Channel IGBT aximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated |
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Toshiba Semiconductor |
Silicon N-Channel IGBT e reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Ha |
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Toshiba Semiconductor |
N-Channel IGBT Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) IGES VGE = ±20V, VCE = 0 ― ICES VCE = 600V, VGE = 0 ― VGE (OFF) I |
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Toshiba Semiconductor |
Silicon N-Channel IGBT = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = ±15 V, RG = 43 Ω (Note1) Min 5.0 Typ. 2.1 2200 0.12 0.40 0.15 0.70 Max ±500 1.0 8.0 2.7 U |
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Toshiba Semiconductor |
N-Channel IGBT rrent Gate−Emitter Cut−Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please d |
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Desde 2024. D4U Semiconductor.
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