Toshiba Semiconductor D24 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D2462	Toshiba Semiconductor	2SD2462 solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and es
2	D2498	Toshiba Semiconductor	2SD2498 ARACTERISTICS (Tc = 25°C) 2SD2498 CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector−Emitter Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Co
3	D2499	Toshiba Semiconductor	2SD2499 if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”
4	2SD2461	Toshiba Semiconductor	Silicon NPN Transistor FE (2) VCE (sat) VBE fT Cob VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 1 A IC = 0.5 A, IB = 5 mA VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Marking D2461 Product No
5	2SD2462	Toshiba Semiconductor	NPN Transistor solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and es
6	2SD2481	Toshiba Semiconductor	Silicon NPN Transistor n voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 µA ― ― 10 µA 30 ― ―
7	2SD2440	Toshiba Semiconductor	Silicon NPN Transistor age Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 100 V, IE = 0 ICER VCE = 80 V, RBE = 50 Ω IEBO VEB = 15 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V
8	2SD2449	Toshiba Semiconductor	Silicon NPN Transistor 60 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 8 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 12 A IC = 8 A, IB = 8 mA VCE = 5 V, IC = 8 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ―
9	2SD2499	Toshiba Semiconductor	Silicon NPN Transistor if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”
10	D2449	Toshiba Semiconductor	2SD2449
11	2SD2406	Toshiba Semiconductor	Silicon NPN Transistor iba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) Char
12	2SD2414	Toshiba Semiconductor	Silicon NPN Transistor Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 4 A IC = 4 A, IB = 0.4 A IC = 4 A, IB = 0.4 A VCE = 4 V, IC = 1 A
13	2SD2480	Toshiba Semiconductor	Silicon NPN Transistor ctor-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VC
14	2SD2498	Toshiba Semiconductor	NPN Transistor (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector−Emitter Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Sw