| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor |
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Toshiba Semiconductor |
NPN TRIPLE DIFFUSED TYPE TRANSISTOR r saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, |
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Toshiba Semiconductor |
Silicon NPN Transistor the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derat |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derat |
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Toshiba Semiconductor |
Silicon NPN Transistor liability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbo |
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Toshiba Semiconductor |
NPN Transistor r saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, |
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Desde 2024. D4U Semiconductor.
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