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Toshiba Semiconductor |
Schottky Barrier Rectifier |
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Toshiba Semiconductor |
Schottky Barrier Type Schottky Barrier Rectifier |
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Toshiba Semiconductor |
Schottky Barrier Rectifier |
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Toshiba Semiconductor |
SCHOTTKY BARRIER RECTIFIERS : 0.013 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the |
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Toshiba Semiconductor |
Schottky Barrier Rectifier this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Tosh |
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Toshiba Semiconductor |
Schottky Barrier Rectifier FM = 0.1 A IFM = 1.0 A IFM = 1.5 A VRRM = 5 V VRRM = 30 V VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (soldering land: 2 mm ´ 2 mm) Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board (soldering land: |
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Desde 2024. D4U Semiconductor.
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