Toshiba Semiconductor C58 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C5859	Toshiba Semiconductor	2SC5859 tching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 18 A IC = 18 A, IB =
2	C5886	Toshiba Semiconductor	2SC5886 conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept a
3	TC58V64AFTI	Toshiba Semiconductor	64M-Bit CMOS NAND EPROM
4	C5855	Toshiba Semiconductor	2SC5855 oltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE
5	C5856	Toshiba Semiconductor	2SC5856 perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and ind
6	2SC5810	Toshiba Semiconductor	NPN Transistor the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please desi
7	2SC5856	Toshiba Semiconductor	SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and ind
8	TC5816BFT	Toshiba Semiconductor	16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
9	2SC5819	Toshiba Semiconductor	NPN Transistor high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
10	C5819	Toshiba Semiconductor	2SC5819 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
11	TC5832FT	Toshiba Semiconductor	32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
12	TC58NS256DC	Toshiba Semiconductor	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM • Organization Memory cell array 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the S
13	TC58F1001F-15	Toshiba Semiconductor	131072 WORD x 8 BIT CMOS FLASH E2PROM
14	TC58FVT321	Toshiba Semiconductor	(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a
15	TC58FVB160A	Toshiba Semiconductor	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. FEATURES • • • • Power supply volt
16	TC58FVT800	Toshiba Semiconductor	(TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
17	TC58V16BDC	Toshiba Semiconductor	16M-Bit CMOS NAND EPROM
18	TC58V64DC	Toshiba Semiconductor	16M-Bit CMOS NAND EPROM • Organization Memory cell array 528 × 16K × 8 Register 528 × 8 Page size 528 bytes Block size (8K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the Sm
19	TC58V32ADC	Toshiba Semiconductor	32M-Bit CMOS NAND EPROM
20	TC58V32FT	Toshiba Semiconductor	32M-Bit CMOS NAND EPROM