Toshiba Semiconductor C55 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC5589	Toshiba Semiconductor	NPN TRANSISTOR Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1
2	TC55257CPL	Toshiba Semiconductor	(TC55257xxx) Silicon Gate CMOS
3	C5587	Toshiba Semiconductor	2SC5587
4	TC55257AF-12	Toshiba Semiconductor	STATIC RAM with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic
5	TC551001BFL-70L	Toshiba Semiconductor	SILICON GATE CMOS STATIC RAM with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control
6	TC5565APL-10	Toshiba Semiconductor	Static RAM with a maximum operating current of 5mA/MHz and maximum access time of 100ns/120ns/150ns. When CE2 is a logical low or \CEl is a logical high, the device is placed in low power standby mode in which standby current is 2uA typically. The TC5565APL/
7	TC55257AF-10	Toshiba Semiconductor	STATIC RAM with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic
8	TC55V4000ST-70	Toshiba Semiconductor	8-BIT STATIC RAM • • • • • • Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Standby Curr
9	TC551001BFL-85L	Toshiba Semiconductor	SILICON GATE CMOS STATIC RAM with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control
10	TC5565APL-15	Toshiba Semiconductor	Static RAM with a maximum operating current of 5mA/MHz and maximum access time of 100ns/120ns/150ns. When CE2 is a logical low or \CEl is a logical high, the device is placed in low power standby mode in which standby current is 2uA typically. The TC5565APL/
11	TC55257AP-10	Toshiba Semiconductor	STATIC RAM with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic
12	TC5516A	Toshiba Semiconductor	2048 WORD x 8 BIT CMOS STATIC RAM
13	TC55V16100FT-15	Toshiba Semiconductor	MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
14	TC551001BTRL-70L	Toshiba Semiconductor	SILICON GATE CMOS STATIC RAM with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control
15	TC5565AFL-15	Toshiba Semiconductor	Static RAM with a maximum operating current of 5mA/MHz and maximum access time of 100ns/120ns/150ns. When CE2 is a logical low or \CEl is a logical high, the device is placed in low power standby mode in which standby current is 2uA typically. The TC5565APL/
16	TC55NEM208AFPN	Toshiba Semiconductor	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS • • • • • • • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operatin
17	C5588	Toshiba Semiconductor	2SC5588
18	TC55V16256JI-15	Toshiba Semiconductor	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS • Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA • • • • • • • Standby:1
19	TC55VZM216AJJN	Toshiba Semiconductor	16-BIT CMOS STATIC RAM • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns Low-power dissipation (IDDO2) (the following are maximum values) Cycle Time Operation (max) 8 140 10 130 12 120 n
20	TC551001BPL-70L	Toshiba Semiconductor	SILICON GATE CMOS STATIC RAM with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control