No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
NPN TRANSISTOR solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a |
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Toshiba Semiconductor |
Silicon NPN TRANSISTOR in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re |
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Toshiba Semiconductor |
2SC5280 |
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Toshiba Semiconductor |
NPN TRANSISTOR 5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEB |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
2SC5242 in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
2SC5266A |
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Toshiba Semiconductor |
NPN TRANSISTOR maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estim |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
8-Bit Equality Comparator • High speed: tpd = 6.4 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
8-BIT EQUALITY COMPARATOR • High speed: tpd = 6.4 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
8-Bit Equality Comparator • High speed: tpd = 6.4 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
CMOS 8-BIT DIGITAL COMPARATORS • High Speed: tpd = 6.4ns (typ.) at VCC = 5V • Low Power Dissipation: ICC = 8µA (max.) at Ta = 25°C* • High Noise Immunity: VNIH = VNIL = 28% VCC (min.) • Symmetrical Output Impedance: IOH = IOL = 24mA (min.). Capability of driving 50Ω transmissio |
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Toshiba Semiconductor |
NPN TRANSISTOR voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data |
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Toshiba Semiconductor |
NPN TRANSISTOR tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i. |
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Toshiba Semiconductor |
NPN TRANSISTOR 5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEB |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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