Toshiba Semiconductor C48 Hoja de datos

No.	parte #	Fabricante	Descripción
1	20FL2C48A	ToshibaSemiconductor	HIGH EFFICIENCY DIODE STACK usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem
2	30GWJ2C48C	Toshiba Semiconductor	SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY CONVERTER & CHOPPER APPLICATIONS) ltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pl
3	U10FL2C48A	Toshiba Semiconductor	DIODE STACK
4	30FWJ2C48M	Toshiba Semiconductor	SCHOTTKY BARRIER RECTIFIER cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please k
5	5GWJ2C48C	Toshiba Semiconductor	SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER APPLICATIONS)
6	U10FWJ2C48M	Toshiba Semiconductor	SCHOTTKY BARRIER RECTIFIER STACK
7	20FWJ2C48M	ToshibaSemiconductor	SCHOTTKY BARRIER RECTIFIER STACK ntly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Preca
8	5DL2C48A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF =
9	5FL2C48A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF =
10	U10DL2C48A	Toshiba Semiconductor	DIODE STACK
11	U10GWJ2C48C	Toshiba Semiconductor	SCHOTTKY BARRIER RECTIFIER STACK
12	U10JL2C48A	Toshiba Semiconductor	HIGH EFFICIENCY DIODE STACK
13	C4868	Toshiba Semiconductor	2SC4868
14	20DL2C48A	ToshibaSemiconductor	HIGH EFFICIENCY DIODE STACK usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem
15	2SC4839	Toshiba Semiconductor	NPN TRANSISTOR cal Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC
16	2SC4840	Toshiba Semiconductor	NPN TRANSISTOR istics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC
17	2SC4841	Toshiba Semiconductor	NPN TRANSISTOR Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB
18	2SC4842	Toshiba Semiconductor	NPN TRANSISTOR ctrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE
19	2SC4843	Toshiba Semiconductor	NPN TRANSISTOR Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB
20	2SC4844	Toshiba Semiconductor	NPN TRANSISTOR teristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V,