| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SC2482 |
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Toshiba Semiconductor |
Silicon NPN Transistor equency Collector output capacitance Noise figure ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) NF (2) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = |
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Toshiba Semiconductor |
Silicon NPN Transistor equency Collector output capacitance Noise figure ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) NF (2) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = |
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Toshiba Semiconductor |
NPN Transistor hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 4 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz JEDEC TO-92MOD J |
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Toshiba Semiconductor |
Silicon NPN Transistor equency Collector output capacitance Noise figure ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) NF (2) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = |
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Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = |
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Toshiba Semiconductor |
2SC2498 |
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Toshiba Semiconductor |
Silicon NPN Transistor equency Collector output capacitance Noise figure ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) NF (2) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = |
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Toshiba Semiconductor |
Silicon NPN Transistor |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
Octal Bus Transceiver (Note 1)(Note 2) TC74AC245FT, TC74AC640FT • High speed: tpd = 3.9 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA ( |
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Toshiba Semiconductor |
Octal Bus Transceiver (Note 1)(Note 2) TC74AC245FT, TC74AC640FT • High speed: tpd = 3.9 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA ( |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Desde 2024. D4U Semiconductor.
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