| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
2SC2235 iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Fre |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR SC-43 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significa |
|
|
|
|
Toshiba Semiconductor |
2SC2236 eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrica |
|
|
|
|
Toshiba Semiconductor |
NPN Transistor y even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precauti |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR V, IE = 0 VEB = 5 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 50 mA IC = 50 mA, IB = 5 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 80 ― 0.50 50 ― Typ. ― ― ― ― ― 0.60 ― ― Max 0.1 0.1 400 ― 0.5 0.70 |
|
|
|
|
Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN Transistor Transition frequency Power gain (Figure 1) 2SC2216 2SC2717 Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE VCE = 12.5 V, IC = 12.5 mA VCE (sat) VBE (sat) Cob Cc･rbb’ fT |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Free Datasheet http://www.Datasheet4U.com 2SC2235 |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN Transistor . Recommended for Sound Output Stage in Line Operated TV. . High Voltage : VC E0=300V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Pow |
|
|
|
|
Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER 4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datashe |
|
|
|
|
Toshiba Semiconductor |
CMOS 4-BIT MICROCONTOROLLER |
|
|
|
|
Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER 4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datashe |
|
|
|
|
Toshiba Semiconductor |
2SC2216 |
|
|
|
|
Toshiba Semiconductor |
NPN Transistor eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrica |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor s. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN epitaxial planar type Transistor Gain Collector Output Capacitance Power Gain Input Power Collector Efficiency Intermodulation Distortion Series Equivalent Input Impedance Series Equivalent Output Impedance SYMBOL V (BR) CEO V (BR) CES V (BR) EBO hFE Cob Gp Pi ηC IMD Zin Zout VCC = |
|
Desde 2024. D4U Semiconductor.
|