| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SA510 • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYM |
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Toshiba Semiconductor |
Silicon PNP Transistor • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYM |
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Toshiba Semiconductor |
Silicon PNP Transistor • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYM |
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Desde 2024. D4U Semiconductor.
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