Toshiba Semiconductor A16 Hoja de datos

No.	parte #	Fabricante	Descripción
1	A1680	Toshiba Semiconductor	2SA1680 ating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Conc
2	2SA1680	Toshiba Semiconductor	TRANSISTOR ating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Conc
3	2SA1681	Toshiba Semiconductor	Silicon PNP Transistor etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revi
4	2SA1620	Toshiba Semiconductor	Silicon PNP Transistor oncept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdow
5	2SA1621	Toshiba Semiconductor	Silicon PNP Transistor g Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current C
6	2SA1618	Toshiba Semiconductor	Silicon PNP Transistor significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t