| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF = |
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Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK .) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewi |
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Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF = |
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Desde 2024. D4U Semiconductor.
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