Toshiba Semiconductor 5DL Hoja de datos

No.	parte #	Fabricante	Descripción
1	5DL2C41A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK = 200V trr tfr Rth (j−c) IF = 2A, di / dt = −20A / µs IF = 1.0A DC Total, Junction to Case TYP. MAX UNIT ― 0.98 V ― 10 µA ― 35 ns ― 100 ns ― 4.0 °C / W POLARITY MARKING * 1 MARK 2 A 5DL2C 3 1 2001-07-13 5DL2C41A 2 2001-07-13 5DL2C41A RE
2	5DL2C48A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF =
3	5DL2CZ47A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK .) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewi
4	5DLZ47A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY RECTIFIER ) CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time (Note 1) Forward Recovery Time (Note 2) Thermal Resistance SYMBOL TEST CONDITION VFM IRRM trr tfr Rth (j−c) IFM = 5A VRRM = 200V IF = 2A, di / dt
5	1R5DL41A	Toshiba Semiconductor	Silicon Epitaxial Junction Type High-Efficiency Rectifier = 1 A, di/dt = -30 A/ms IF = 1.0 A Junction to Ambient Junction to Lead Marking JEDEC ― JEITA ― TOSHIBA 3-4B1A Weight: 0.47 g (typ.) Min Typ. Max Unit ¾ ¾ 0.98 V ¾ ¾ 100 mA ¾ ¾ 35 ns ¾ ¾ 100 ns ¾ ¾ 100 °C/W ¾ ¾ 30 °C/W Type Code Lot No. DL
6	U5DL2C48A	Toshiba Semiconductor	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF =