Toshiba RN1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	RN1504	Toshiba	Silicon NPN Epitaxial Type Transistors Storage temperature range RN1501 to 1506 RN1501 to 1504 RN1505, 1506 RN1501 to 1506 VCBO VCEO VEBO IC PC * Tj Tstg 50 V 50 V 10 V 5 100 mA 300 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application o
2	RN1604	Toshiba	Silicon NPN Epitaxial Type Transistors ng Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1601 to 1606 RN1601 to 1604 RN1605, 1606 RN1601 to 1606 VCBO VCEO VEBO IC
3	RN1305	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
4	RN1113	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
5	RN1702JE	Toshiba	Silicon NPN Epitaxial Type Transistors (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN1701JE to 1706JE Emitter-base voltage RN1701JE to 1704JE RN1705JE RN1706JE Collector current Collector power dissipation RN1701JE Junction temperature to 170
6	RN1704	Toshiba	Silicon NPN Epitaxial Type Transistors ng Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1701 to 1706 RN1701 to 1704 RN1705, 1706 RN1701 to 1706 VCBO VCEO VEBO IC
7	RN1505	Toshiba	Silicon NPN Epitaxial Type Transistors Storage temperature range RN1501 to 1506 RN1501 to 1504 RN1505, 1506 RN1501 to 1506 VCBO VCEO VEBO IC PC * Tj Tstg 50 V 50 V 10 V 5 100 mA 300 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application o
8	RN1413	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
9	RN1109	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
10	RN1108	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
11	RN1307	Toshiba	Silicon NPN Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
12	RN1304	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
13	RN1119MFV	Toshiba	Silicon NPN Epitaxial Type Transistors W Tj 150 °C Tstg −55 to 150 °C Land Pattern Dimensions (for reference only) Unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant chan
14	RN1109MFV	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size
15	RN1110	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
16	RN1112	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
17	RN1111MFV	Toshiba	Silicon NPN Epitaxial Type Transistors t: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the o
18	RN1111	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
19	RN1711JE	Toshiba	Silicon NPN Epitaxial Type Transistors ipation Junction temperature Storage temperature range VCBO 50 V VCEO 50 V VEBO 5 V IC 100 mA PC (Note 1) 100 mW Tj 150 °C Tstg −55 to 150 °C Q1 Q2 123 Note: Using continuously under heavy loads (e.g. the application of high
20	RN1902	Toshiba	Silicon NPN Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba o