| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
GTR Module |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
Silicon Carbide N-Channel MOSFET (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 �, built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate. 3 |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
IGBT |
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Toshiba Semiconductor |
High Power & High Speed Switching Applications ime Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth |
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Toshiba Semiconductor |
IGBT Module Silicon N Channel IGBT ector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP |
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Toshiba |
GTR Module |
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Desde 2024. D4U Semiconductor.
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