Toshiba K26 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2610	Toshiba Semiconductor	2SK2610 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e
2	K2698	Toshiba Semiconductor	Silicon N-Channel MOSFET ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op
3	K2662	Toshiba Semiconductor	2SK2662 inuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
4	K2611	Toshiba Semiconductor	2SK2611 ht: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the op
5	K2699	Toshiba Semiconductor	2SK2699 C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
6	K2608	Toshiba Semiconductor	2SK2608 (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltag
7	K2607	Toshiba Semiconductor	Silicon N-Channel FET Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating condition
8	2SK2611	Toshiba Semiconductor	Silicon N-Channel MOSFET te: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (
9	2SK2607	Toshiba Semiconductor	Silicon N-Channel MOSFET Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating condition
10	K2679	Toshiba Semiconductor	2SK2679 oads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/v
11	2SK2601	Toshiba Semiconductor	N-Channel MOSFET usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem
12	2SK2603	Toshiba Semiconductor	Silicon N-Channel MOSFET avy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curr
13	2SK2606	Toshiba Semiconductor	Silicon N-Channel MOSFET der heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperatur
14	2SK2608	Toshiba Semiconductor	N-Channel MOSFET (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltag
15	2SK2610	Toshiba Semiconductor	N-Channel MOSFET Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e
16	2SK2602	Toshiba Semiconductor	Silicon N-Channel MOSFET er heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature
17	2SK2604	Toshiba Semiconductor	Silicon N-Channel MOSFET Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.0 °C / W 50 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch =
18	2SK2605	Toshiba Semiconductor	Silicon N-Channel MOSFET high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the a
19	2SK2615	Toshiba Semiconductor	Silicon N-Channel MOSFET Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e
20	2SK2698	Toshiba Semiconductor	Silicon N-Channel MOSFET r heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/