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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W |
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Toshiba |
2SK161 |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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Toshiba |
2SK1643 |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16V60W |
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Toshiba Semiconductor |
N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16N60W |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-1L1B absolute maximum ratings. Weight: 0.0015 g (typ.) Please design the appropriate reliability upon reviewin |
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Toshiba Semiconductor |
N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16G60W |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID = 0. |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0. |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba |
N-Channel Enhancement MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET －0.1 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temp |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0. |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0. |
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Toshiba |
Silicon N-Channel MOSFET (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 5.6 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.0 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.0 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.2 Ω (max) (@VGS = 4.5 V) 3. Packaging and Pin Assignment SS |
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Desde 2024. D4U Semiconductor.
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