Toshiba J51 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SJ512	Toshiba Semiconductor	Silicon P-Channel MOSFET mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 4.16 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch
2	J516	Toshiba Semiconductor	2SJ516 under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperat
3	2SJ516	Toshiba Semiconductor	Silicon P-Channel MOSFET under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperat
4	J512	Toshiba Semiconductor	Silicon P Channel MOS Type Field Effect Transistor mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 4.16 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch
5	J511	Toshiba	2SJ511 −5K1B Weight: 0.05 g (typ.) Marking Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic s
6	2SJ511	Toshiba Semiconductor	Silicon P-Channel MOSFET −5K1B Weight: 0.05 g (typ.) Marking Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic s
7	SSM6J51TU	Toshiba Semiconductor	Silicon P-Channel MOSFET erature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual r
8	SSM6J511NU	Toshiba	Silicon P-Channel MOSFET (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corpora
9	SSM6J512NU	Toshiba	Silicon P-Channel MOSFET (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: