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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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TOSHIBA |
GT20J321 iode) Symbol Rth (j-c) Rth (j-c) Max 2.78 4.23 Unit °C/W °C/W ww.DataSheet4U.com Equivalent Circuit Collector Gate Emitter 1 www.DataSheet4U.com 2002-04-08 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www. |
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Toshiba Semiconductor |
Silicon N-Channel Transistor |
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Toshiba Semiconductor |
Silicon P-Channel Transistor |
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Toshiba Semiconductor |
Silicon N-Channel IGBT = 0 VCE = 600 V, VGE = 0 IC = 2 mA, VCE = 5 V IC = 20 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 20 A VGG = ±15 V, RG = 56 Ω (Note1) Min 5.0 Typ. 2.1 1450 0.12 0.40 0.15 0.50 Max ±500 1.0 8.0 2.7 U |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT ) Rth (j-c) Max 2.78 4.23 Unit °C/W °C/W ww.DataSheet4U.com Equivalent Circuit Collector Gate Emitter 1 www.DataSheet4U.com 2002-04-08 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www.DataSheet4U.com GT20 |
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Toshiba |
Silicon N-Channel IGBT (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-220SIS 1 2012-04-26 Rev.2.0 Free Datasheet h |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT V (Pulsed) VCE=10V, VGE=0, f=1MHz MIN. ― ― 4 ― ― ― ― ― ― ― TYP. ― ― 5 5 2000 0.1 0.15 4.0 4.5 ― MAX. ±100 10 7 8 ― 0.5 0.5 6.0 7.0 1.66 °C / W µs UNIT nA µA V V pF 1 2002-02-06 GT25G101 2 2002-02-06 GT25G101 3 2002-02-06 GT25G101 RESTRICTIO |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT VCE = 1200 V, VGE = 0 IC = 2.5 mA, VCE = 5 V IC = 25 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 25 A VGG = ±15 V, RG = 43 W (Note1) Min ¾ ¾ 4.0 ¾ ¾ Typ. ¾ ¾ ¾ 2.1 1360 0.10 0.30 0.16 0.68 ¾ Max ±500 1.0 7.0 2.7 ¾ U |
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Desde 2024. D4U Semiconductor.
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