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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT tion voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF t |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT witching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min GT15J121 Typ. Max ±500 Unit IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff Rth(j-c) VGE=±20V,VCE=0 VCE=600V,VGE=0 IC=1.5mA,VCE=5V IC |
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Toshiba |
GT10J303 icantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Pr |
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Toshiba Semiconductor |
Silicon N-Channel IGBT icantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Pr |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT 0 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note1) Min 4.0 Typ. 2.1 600 0.07 0.30 0.16 0.50 Max ±500 1.0 7. |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT time Turn-on time Switching time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IF = 10 A, VG |
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Toshiba |
Silicon N-Channel MOSFET な ど) にこれらのをすること ( “” という) はもされていませんし、またもされていません。に されているをにすることは、おのでなされることとなります。 • にされているは、の･をするためのもので、そのにしておよびの そののにするまたはのをうものではありません。 • のは、のなどによりなしにされることがあります。 2001-01-31 1/3 GT10G101 2001-01-31 2/3 GT10G101 2001-01-31 3/3 |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT olatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min GT10J321 Typ. Max ±500 Unit IG |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT itance Rise time Switching time Turn-on time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) I |
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Toshiba Semiconductor |
Silicon N-Channel IGBT 00 V, VGE = 0 IC = 1.5 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 15 A VGG = ±15 V, RG = 56 W (Note1) Min ¾ ¾ 4.0 ¾ ¾ Typ. ¾ ¾ ¾ 2.1 850 0.05 0.12 0.16 0.56 ¾ Max ±500 1.0 7.0 2.7 ¾ Unit nA mA |
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Desde 2024. D4U Semiconductor.
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