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Toshiba CRS DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
CRS10I40A

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.49 V (max) @IFM = 0.7 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packag
Datasheet
2
CRS10I40B

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin
Datasheet
3
CRS01

Toshiba Semiconductor
Schottky Barrier Rectifier
Datasheet
4
CRS02

Toshiba Semiconductor
Schottky Barrier Type Schottky Barrier Rectifier
Datasheet
5
CRS03

Toshiba Semiconductor
Schottky Barrier Rectifier
Datasheet
6
CRS04

Toshiba Semiconductor
SCHOTTKY BARRIER RECTIFIERS
: 0.013 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
Datasheet
7
CRS06

Toshiba Semiconductor
Schottky Barrier Rectifier
this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Tosh
Datasheet
8
CRS08

Toshiba Semiconductor
Schottky Barrier Rectifier
FM = 0.1 A IFM = 1.0 A IFM = 1.5 A VRRM = 5 V VRRM = 30 V VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (soldering land: 2 mm ´ 2 mm) Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board (soldering land:
Datasheet
9
CRS30I40A

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.55 V (max) @IFM = 3 A (2) Average forward current: IF(AV) = 3 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin
Datasheet
10
CRS30I30A

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.49 V (max) @IFM = 3 A (2) Average forward current: IF(AV) = 3 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin
Datasheet
11
CRS20I40B

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.52 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin
Datasheet
12
CRS20I30B

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin
Datasheet
13
CRS20I40A

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.6 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging
Datasheet
14
CRS20I30A

Toshiba
Schottky Barrier Rectifier
3-2A1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pl
Datasheet
15
CRS09

Toshiba
Schottky Barrier Rectifier
nt change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appr
Datasheet
16
CRS05

Toshiba
Schottky Barrier Rectifier
size: 50 mm × 50 mm soldering land: 2 mm × 2mm) Rectangular waveform (α = 180°), VR = 15 V A °C °C JEDEC ― JEITA ― TOSHIBA 3-2A1A Weight: 0.013 g (typ.) Note 2: Device mounted on a glass-epoxy board board size: 50 mm × 50 mm soldering land:
Datasheet
17
MAC94A4

Toshiba
SCRs / Triac
Datasheet
18
CRS10I30A

Toshiba
Schottky Barrier Rectifier
A 3-2A1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Datasheet
19
CRS10I30B

Toshiba
Schottky Barrier Rectifier
3-2A1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pl
Datasheet
20
CRS10I30C

Toshiba
Schottky Barrier Diode
(1) Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin
Datasheet



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