Toshiba C43 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C4394	Toshiba	2SC4394 lectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, I
2	2SC4394	Toshiba Semiconductor	Silicon NPN Epitaxial Planar Type Transistor lectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, I
3	47C432AN	Toshiba Semiconductor	TMP47C432AN
4	C4315	Toshiba	2SC4315 ctrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE
5	C4317	Toshiba	2SC4317 acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1
6	C4322	Toshiba	2SC4322 aracteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB =
7	47C434N3528	Toshiba Semiconductor	TMP47C434N
8	C4320	Toshiba	2SC4320 ristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, I
9	C4321	Toshiba	2SC4321 acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1
10	C4324	Toshiba	2SC4324 teristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V,
11	C4325	Toshiba	2SC4325 aracteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB =
12	C4393	Toshiba	2SC4393 ¾ 10.5 ¾ dB ¾ 1.5 ¾ dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance I
13	2SC4315	Toshiba Semiconductor	Silicon NPN Transistor ctrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE
14	1ZC43A	Toshiba	ZENER DIODE
15	TMP47C434N	Toshiba Semiconductor	CMOS 4-BIT MICROCONTROLLER
16	TMPZ84C43AT-6	Toshiba Semiconductor	TLCS-Z80 SIO: SERIAL INPUT/OUTPUT CONTROLLER
17	TMP47C434AN	Toshiba	(TMP47C434AN/AF / TMP47C634AN/AF) CMOS 4-Bit Microcontroller
18	2SC4317	Toshiba Semiconductor	Silicon NPN Transistor acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1
19	2SC4320	Toshiba Semiconductor	Silicon NPN Transistor ristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, I
20	2SC4321	Toshiba Semiconductor	Silicon NPN Transistor acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1