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Toshiba |
Dual Binary Counter (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: fMAX = 72 MHz (typ.) at VCC = 5 V (3) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage ra |
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Toshiba |
SILICON NPN TRANSISTOR • High Transition Frequency : f T=200MHz(Min f ) • Low Saturation Voltage : VCE ( sat )=0.25V(Max.) at I c=10mA, Ig=lmA • High Switching Speed : t stg^25ns(Typ. 00.45 ,02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- |
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Toshiba |
2SC3963 ropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 |
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Toshiba |
Dual Binary Counter |
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Toshiba |
DUAL BINARY COUNTER • High speed: fmax = 170 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
ZENER DIODE |
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Toshiba Semiconductor |
Dual Decade Counter • High speed: fmax = 84 MHz (typ.) at VCC = |
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Toshiba |
Dual Binary Counter High speed: fmax = 170 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
DUAL BINARY COUNTER • High speed: fmax = 170 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba Semiconductor |
DUAL BINARY COUNTER • High speed: fmax = 72 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 10 LSTTL loads • S |
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Toshiba |
Dual Binary Counter High speed: fmax = 170 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
CMOS 8-Bit Single-Chip Microcomputer |
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Toshiba |
TMP80C39AP |
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Toshiba Semiconductor |
DUAL BINARY COUNTER • High speed: fmax = 72 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 10 LSTTL loads • S |
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Toshiba Semiconductor |
Dual Decade Counter • High speed: fmax = 84 MHz (typ.) at VCC = |
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Toshiba |
2SC3964 citance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IB = |
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Toshiba Semiconductor |
Dual Binary Counter • High speed: fmax = 180 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmissi |
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Toshiba |
8-BIT SINGLE-CHIP MICROCOMPUTER Software compatible with TMP8049P/i8049 CMOS/LSI for low power dissipation less than 50 m\' at SV, 6M}]z High Noise Immunity 2.5~s Instruction Cycle Extended temperature operati.on: -40°C to +R5°C Single power supply 2K x 8 masked ROM 128 x 8 RAM 27 |
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Toshiba Semiconductor |
Silicon NPN Transistor ropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 |
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Toshiba Semiconductor |
Silicon NPN Transistor citance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IB = |
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Desde 2024. D4U Semiconductor.
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