Toshiba C38 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C3803	Toshiba	Silicon NPN Transistor s product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba S
2	C3805	Toshiba	Silicon NPN Transistor hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 0.5 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Marking
3	2SC388ATM	Toshiba Semiconductor	NPN Epitaxial Planar Type Silicon Transistor
4	2SC383	Toshiba Semiconductor	NPN Transistor
5	C3886A	Toshiba Semiconductor	Silicon NPN Power Transistors BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V www.DataSheet4U.com VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V ICBO Collector cut-off cur
6	LTM04C380K	Toshiba	LCD (1) 4”VGA display size for PDAs(personal digital assistants) (2) Super high resolution (202 pixel per inch) (3) 256k-colors LTM04C380K (p-Si TFT) TENTATIVE MECHANICAL SPECIFICATIONS Item Dimensional Outline (typ.) Number of Pixels Active Area Pixe
7	C3862	Toshiba	Silicon NPN epitaxial planar type Transistor ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 ¾ 0.6 0.9 pF 1500 2400 ¾ MHz Marking 1 2003-03-19 2SC3862 2 2003-03-19 2SC3862 3 2003-03-19 2SC3862 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality an
8	2SC382TM	Toshiba	SILICON NPN TRANSISTOR • High Gain : Gpe=35dB(Typ, ) (f=45MHz) • Excellent Forward AGC Characteristic. 5.1 MAX. Unit in mm M 0.55MAX. 0.45 00 00 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu
9	2SC383TM	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE TRANSISTOR
10	3886A	Toshiba Semiconductor	2SC3886A
11	LTM07C382J	Toshiba	LCD (1) 7.0 SVGA-wide display size for palm size PCs (2) High resolution (169 pixel per inch) (3) 262k-colors TENTATIVE MECHANICAL SPECIFICATIONS Item Dimensional Outline (typ.) Number of Pixels Active Area Pixel Pitch Weight (approximately) Backlight
12	2SC3803	Toshiba Semiconductor	Silicon NPN Transistor s product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba S
13	2SC3805	Toshiba Semiconductor	Silicon NPN Transistor hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 0.5 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Marking
14	2SC380TM	Toshiba Semiconductor	Silicon NPN Transistor 12 V, IC = 2 mA (Note) VCE (sat) VBE fT Cob Cc･rbb’ Gpe IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1) Note: hFE cl
15	2SC3862	Toshiba Semiconductor	Silicon NPN Transistor ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 ¾ 0.6 0.9 pF 1500 2400 ¾ MHz Marking 1 2003-03-19 2SC3862 2 2003-03-19 2SC3862 3 2003-03-19 2SC3862 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality an