Toshiba C27 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C2705	Toshiba Semiconductor	2SC2705 aximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estim
2	C2792	Toshiba Semiconductor	2SC2792
3	LTM12C275A	Toshiba	LCD Module (1) 12.1 SVGA for FA and LCD monitor use (2) High Brightness 250 cd/m2 with twin CCFL Backlight (3) Long life CCFLs (Average life time : 25000 hours) TENTATIVE MECHANICAL SPECIFICATIONS Item Dimensional Outline (typ.) Number of Pixels Active Area P
4	C2703	Toshiba	2SC2703 E = 2 V, IC = 100 mA VCB = 10 V, f = 1 MHz Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 30 ― ― V 100 ― 320 40 ― ― ― ― 0.5
5	2SC2703	Toshiba Semiconductor	Silicon NPN TRANSISTOR E = 2 V, IC = 100 mA VCB = 10 V, f = 1 MHz Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 30 ― ― V 100 ― 320 40 ― ― ― ― 0.5
6	2SC2782A	Toshiba Semiconductor	Silicon NPN epitaxial planar type Transistor Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). MARKING TOSHIBA JAPAN 2SC2782 Dot Lot No. 1 2007-11-01 2SC2782A ELECTRICAL CHARACT
7	74HC273D	Toshiba	Octal D-Type Flip-Flop (1) High speed: fMAX = 67 MHz (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V 4. Packaging SOIC20 ©2016 Toshiba C
8	2SC2754	Toshiba	Silicon NPN Transistor CB =35V, I E=0 V EB=5V, I C =0 V CE =12V, I c =2mA V CE(sat) IC=10mA, Ig=lmA Base-Emitter Voltage Base-Emitter Saturation Voltage VBE V CE=12V, I C=2mA vBE(sat) IC=10mA, lB=lmA Transition Frequency fT Collector Output Capacitance Cob V CE =
9	2SC2705	Toshiba Semiconductor	TRANSISTOR 5 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.36 g (typ.) Min ― ― 150 80 ― ― ― ― Typ. ― ― ― ― ― ― 200 1.8 Max 0.1 0.1 ― 240 1.0 0.8 ― ― V
10	2SC2704	Toshiba	Silicon NPN Transistor : . Complementary to 2SA1144. . Small Collector Output Capacitance : C b=l . 8pF(Typ. . High Transition Frequency : fT =200MHz(Typ. Unit in mm 7. 9 MAX. H ^aixQl5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Vo
11	C2782	Toshiba	2SC2782
12	C2717	Toshiba	2SC2717 Transition frequency Power gain (Figure 1) 2SC2216 2SC2717 Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE VCE = 12.5 V, IC = 12.5 mA VCE (sat) VBE (sat) Cob Cc･rbb’ fT
13	C2753	Toshiba	2SC2753 ¾ 16 ¾ ¾ 10.5 ¾ dB ¾ 1.5 ¾ dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse tran
14	C2714	Toshiba	2SC2714 oltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
15	2SC2706	Toshiba	Silicon NPN Transistor . Complementary to 2SA1146. . Recommended for 70W audio frequency amplifier output stage. . High transition frequency : f T=90MHz (Typ. 5, 9 MAX.. J. . Unit in mm a2±CL2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-E
16	2SC2710	Toshiba Semiconductor	Silicon NPN TRANSISTOR IB = 20 mA VCE = 1 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 30 ¾ ¾
17	2SC2713	Toshiba Semiconductor	Silicon NPN Transistor ly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe
18	2SC2714	Toshiba Semiconductor	Silicon NPN Transistor oltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
19	2SC2712	Toshiba Semiconductor	Silicon NPN Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
20	2SC2715	Toshiba Semiconductor	Silicon NPN Transistor 12 V, IC = 2 mA VCE (sat) VBE IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA fT Cob Cc･rbb’ Gpe VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1) Note: hFE classifi