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Toshiba |
Silicon NPN Transistor . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A • Fall Time : tf=0.5/»s (Max.) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Ba |
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Desde 2024. D4U Semiconductor.
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