Toshiba B16 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B1640	Toshiba Semiconductor	2SB1640 (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60
2	B1667	Toshiba	Silicon PNP Triple Diffused Type Transistor se design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)
3	B1642	Toshiba	2SB1642
4	2SB1682	Toshiba	Silicon PNP Triple Diffused Type Transistor mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT ton IB1 Test Conditions VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −7 A IC = −7 A, IB = −7 mA VCE = −4 V, IC = −7 A VCE = −10 V, IC =
5	TC58FVB160A	Toshiba Semiconductor	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. FEATURES • • • • Power supply volt
6	1ZB16	Toshiba	SILICON DIFFUSED TYPE ZENER DIODE OEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX 34 FORWARD VOLTAGE VF (V) MAX 1.2 MEASURE− MENT CURRENT IF (A) 0.2 REVERSE CURRENT IR (µA) MAX 10 MEASURE− MENT VOLTAGE VR (V) 3 6.8 7.5 8.3 30 10 4 5 1.2 0.2 10 4.5 7.4 8.2 9.1 30 10 4 6
7	2SB1642	Toshiba Semiconductor	Silicon PNP Transistor
8	U1ZB16	Toshiba Semiconductor	CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS 61.2 67.5 73.8 90 99 135 162 180 190 200 198 210 220 216 230 240 ZENER MEASUREIMPEDANCE MENT rd (Ω) CURRENT IZ (mA) TYP. MAX MAX 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 43 47 51 68 75 82 100 110 150 180 200 200 210 220 220 230 240 2
9	TC58FVB160	Toshiba	16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
10	TAR5SB16	Toshiba	Point Regulator • Low stand-by current • Overtemperature/overcurrent protection • Operation voltage range is wide. • Maximum output current is high. • Difference between input voltage and output voltage is low. • Small package: SMV (SOT-25) (SC-74A) • Ceramic capaci
11	2SB1602	Toshiba Semiconductor	TRANSISTOR
12	2SB1617	Toshiba Semiconductor	Silicon PNP Transistor
13	2SB1640	Toshiba Semiconductor	Silicon PNP Transistor t Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 100 15 ― ― ― ― Typ.
14	2SB1667	Toshiba Semiconductor	Silicon PNP Transistor se design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)
15	2SB1641	Toshiba	Silicon PNP Epitaxial Transistor
16	TCR5SB16	Toshiba Semiconductor	200mA CMOS Low-Dropout Regulator • Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode ) • Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA ) • High current output ( IOUT = 200 mA (max)