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Toshiba |
Silicon PNP Transistor |
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Toshiba |
Silicon PNP Transistor • Complementary to 2SC790 . 10 Watts Output Applications Unit in mm 103 MAX 03.6±O.3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector - Base Voltage VcBO -50 V Collector-Emitter Voltage v CE0 -40 V Emitter-Base Volt |
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Toshiba |
Silicon PNP Transistor • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.) • Complementary to 2SC495 and 2SC496. 2SA496 2SA505, 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage 2SA505 2SA496 Collector-Emitter Voltage Emi |
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Toshiba |
Silicon PNP Epitaxial Transistor |
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Toshiba |
3LINE DIGITAL Y/C SEPARATOR · · · · · · · · · · · TV format : NTSC (3.58), PAL, M-PAL, and N-PAL Dynamic comb filter Vertical edge enhancement circuit PLL 8 × multiplier circuit Internal 8-bit 4 fsc AD converter Internal 8-bit precision 8 fsc DA converter (2 ch) Sync tip clamp |
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Toshiba |
3LINE DIGITAL Y/C SEPARATOR · · · · · · · · · · · TV format : NTSC (3.58), PAL, M-PAL, and N-PAL Dynamic comb filter Vertical edge enhancement circuit PLL 8 × multiplier circuit Internal 8-bit 4 fsc AD converter Internal 8-bit precision 8 fsc DA converter (2 ch) Sync tip clamp |
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Toshiba |
Silicon PNP Epitaxial Transistor • High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500) • High Transition Frequency : f T=250MHz (Typ.) • Fast Switching Speed : t on=25ns (Typ.) • Complementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4 |
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Desde 2024. D4U Semiconductor.
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