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Toshiba |
Silicon N-Channel MOSFET (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.62 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK750A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu |
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Toshiba Semiconductor |
MICROWAVE POWER GAAS FET |
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Toshiba |
1.5A MOTOR DRIVER WITH VRAKE FUNCTION l Bi-directional DC Motor Driver l 1.5A Current Capacity l Low standby current : 100μA (Max.) l 4 Operation mode of forward, Reverse, Stop and Brake l Recommended operating supply voltage range: VCC = 8V to 16V l Built-in Protective Functions : Therm |
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Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
TOSHIBA IGBT Module Silicon N Channel IGBT e resistance Symbol IGES ICES VGE (off) VCE (sat) Cies VGE RG td (on) tr Switching time ton td (off) tf toff Forward voltage Reverse recovery time Thermal resistance RTC Operating current VF trr Rth (j-c) Irtc IF = 800A, VGE = 0V Tj = 25°C Tj = 125°C |
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Toshiba |
SECAM CHROMA PRCESSOR |
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Toshiba Semiconductor |
CMOS 8-Bit Single-Chip Microcomputer |
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Toshiba |
COLOR TELEVISION SERVICE MANUAL |
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Toshiba |
HEX BUFFER/CONVERTER (1) High speed: tpd = 9 ns (typ.) at VCC = 5.0 V (2) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25 � (3) High noise immunity: VNIH = VNIL = 28 % VCC (min) (4) Symmetrical Output impedance: |IOH| = IOL = 6 mA (min) (5) Balanced propagation dela |
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Toshiba |
Fast Load Transient 300mA CMOS Low Drop-Out Regulator • Ultra small package WCSP4F (0.645 mm x 0.645 mm (typ.); t 0.33 mm (max)). • Low quiescent bias current (IB(ON) = 0.34 μA (typ.) at IOUT = 0 mA, output voltage up to 1.5 V) • High ripple rejection ratio 70 dB at 0.8 V-output • Fast load transient re |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
Real Time Clock taSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U |
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Toshiba Semiconductor |
TD62S050AFM C ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ IOUT = 400 mA, hFE = 800 ¾ ¾ ¾ Electrical Characteristics (Ta = 25°C) Characteristics Output leakage current Output saturation voltage DC current amplification ratio Input current Input voltage Output ON Clamp diode leakage curr |
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Toshiba |
Field Effect Transistor (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 22 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: |
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Desde 2024. D4U Semiconductor.
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