Toshiba 3SK Hoja de datos

No.	parte #	Fabricante	Descripción
1	3SK121	Toshiba	Silicon N-Channel MOSFET . Superior Cross Modulation Performance . Low Reverse Transfer Capacitance : C rs s =20fF (Typ .) . Low Noise Figure : NF= 1.5dB (Typ. ) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage SYMBOL VDS vgis RATING
2	3SK294	Toshiba Semiconductor	Silicon N-Channel Dual Gate MOS Type FET
3	K249	Toshiba Semiconductor	3SK249
4	3SK114	Toshiba	Silicon N-Channel Transistor . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : C rss=Q-03pF (Typ.) . Low Noise Figure : NF=1 ,4dB(Typ. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate 1 - Source Voltage Gate 2 - Source Voltage Drai
5	3SK73	Toshiba	Silicon N-Channel Transistor : Wide AGC Range and Few Changes of Response Extremely Low Reverse Transfer Capcitance : Crss=0.03pF (Typ.) Low Noise Figure : NF=2.2dB (Typ.) (f=100MHz) Possibility Low Operation Voltage. Superior Cross Modulation Performance. Contains Cate Protecti
6	3SK195	Toshiba Semiconductor	Silicon N Channel Dual Gate MOS Type FET
7	3SK207	Toshiba Semiconductor	Silicon N Channel Dual Gate MOS Type FET
8	3SK225	Toshiba Semiconductor	Silicon N Channel Dual Gate MOS Type FET
9	3SK249	Toshiba Semiconductor	N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR n the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Ele
10	3SK283	Toshiba Semiconductor	N-Channel Transistor
11	3SK293	Toshiba Semiconductor	Silicon N-Channel Dual Gate MOS Type FET
12	3SK320	Toshiba Semiconductor	N-Channel Transistor
13	3SK115	Toshiba	Silicon N-Channel Transistor . Superior Cross Modulation Pe rf ormance . Low Crss : C rss =0.03pF . Low Noise : NF=3.2dB •S Q6 0.3 U M£LaJ 9.8 MI N. 3 y^O.75 "\|\|."0-6 5 CO' 2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage Gate2-Source V
14	3SK22	Toshiba	Silicon N-Channel Transistor • High Power Gain : Gps =20dB (Typ. ) (f=100MHz) • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz) • High Forward Transfer Admittance : \|y fs \| = 7ms (Typ.) (f=lkHz) • High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz) • Low Reverse Transfer Capacita
15	3SK126	Toshiba Semiconductor	N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS)
16	3SK127	Toshiba Semiconductor	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)
17	3SK153	Toshiba Semiconductor	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)
18	3SK199	Toshiba Semiconductor	Silicon N Channel Dual Gate MOS Type FET
19	3SK226	Toshiba Semiconductor	Silicon N Channel Dual Gate MOS Type FET
20	3SK240	Toshiba Semiconductor	GaAs N-Channel Dual Gate MES Type FET