| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR • High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS B |
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Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR • High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS B |
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Desde 2024. D4U Semiconductor.
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