Toshiba 2SA Hoja de datos

No.	parte #	Fabricante	Descripción
1	A1013	Toshiba Semiconductor	2SA1013 ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han
2	A1837	Toshiba Semiconductor	2SA1837 EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.
3	A1930	Toshiba Semiconductor	2SA1930 opriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-06-15 ht
4	2SA1302	Toshiba	Silicon PNP Transistor • Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency - Ampliﬁer Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C
5	A1941	Toshiba Semiconductor	2SA1941 c.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. relia
6	A1048	Toshiba Semiconductor	2SA1048 the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De
7	2SA1015	Toshiba Semiconductor	Silicon NPN TRANSISTOR cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
8	A1160	Toshiba Semiconductor	2SA1160 gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
9	A949	Toshiba Semiconductor	2SA949
10	A1263	Toshiba Semiconductor	2SA1263 . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collec
11	2SA1150	Toshiba Semiconductor	TRANSISTOR viewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C)
12	2SA1306	Toshiba	Silicon PNP Transistor . High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2SA1306A 2S
13	A966	Toshiba	2SA966
14	A965	Toshiba Semiconductor	2SA965
15	2SA1771	Toshiba Semiconductor	TRANSISTOR
16	A1943	Toshiba	2SA1943 e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability t
17	A1020	Toshiba Semiconductor	2SA1020 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB
18	2SA940	Toshiba	Silicon PNP Transistor . Complementary to 2SC2073 2SA940 Unit in mm 1Q3MAX. £6x0.2 MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VcBO 'CEO Vebc Collector Current ic Base Current IB Collecto
19	2SA950	Toshiba Semiconductor	TRANSISTOR IC = -100 mA (Note) hFE (2) VCE (sat) VCE = -1 V, IC = -700 mA IC = -500 mA, IB = -20 mA VBE VCE = -1 V, IC = -10 mA fT VCE = -5 V, IC = -10 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 Min Typ. Max
20	2SA970	Toshiba Semiconductor	Silicon PNP Epitaxial Type Transistor significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“H