| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
Silicon N-Channel MOSFET heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu |
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Toshiba Semiconductor |
2SK2847 eavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cur |
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Toshiba Semiconductor |
N-Channel MOSFET plication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are |
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Toshiba Semiconductor |
2SK2843 g continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. ope |
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Toshiba Semiconductor |
N-Channel MOSFET usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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Toshiba Semiconductor |
N-Channel MOSFET tion of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are with |
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Toshiba Semiconductor |
Variable Capacitance Diode · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is |
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Toshiba |
LOW VOLTAGE 20-BIT D-TYPE LATCH WITH 3.6V TOLERANT INPUTS AND OUTPUTS |
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Toshiba |
Low-Voltage 18-Bit D-Type Latch • 26-Ω series resistors on outputs • Low-voltage operation: VCC = 1.8 to 3.6 V • High-speed operation: tpd = 3.9 ns (max) (VCC = 3.0 to 3.6 V) : tpd = 5.1 ns (max) (VCC = 2.3 to 2.7 V) : tpd = 9.8 ns (max) (VCC = 1.8 V) • Output current: IOH/IOL = ±1 |
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Toshiba |
UHF/VHF TUNER IC l Supply voltage : 5V l Built-in mixer / oscillator for VHF and CATV bands l Built-in mixer / oscillator for UHF band l Oscillator circuits is low phase noise. l Built-in IF amplifier l Low power dissipation. Weight: 0.07g (Typ.) Note: These devic |
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Toshiba |
UHF / VHF Tuner IC l Supply voltage : 5V l Built-in mixer / oscillator for VHF and CATV bands l Built-in mixer / oscillator for UHF band l Oscillator circuits is low phase noise. l Built-in IF amplifier l Low power dissipation. Note: Weight: 0.07g (Typ.) These devices |
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Toshiba Semiconductor |
2SK2845 significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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Toshiba |
2SK2847 application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) |
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Toshiba |
Photocoupler e Option(V4). 1 16 2 15 Construction Mechanical Rating 3 14 Creepage Distance Clearance Insulation Thickness 5.0 mm (min) 5.0 mm (min) 0.4 mm (min) 4 13 5 12 6 11 7 10 8 9 1,3,5,7 : Anode- Cathode 2,4,6,8 : Cathode Anode 9,1 |
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Toshiba Semiconductor |
N-Channel MOSFET nder heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperatu |
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Toshiba Semiconductor |
N-Channel MOSFET heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu |
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Toshiba |
CD SINGLE CHIP PROCESSOR |
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Toshiba |
Photocoupler Option(V4). Construction Mechanical Rating Creepage Distance Clearance Insulation Thickness 5.0 mm (min) 5.0 mm (min) 0.4 mm (min) 2 3 1 : Anode Cathode 2 : Cathode Anode 3 : Emitter 4 : Collector © 2019 1 Toshiba Electronic Devices & Storag |
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Toshiba Semiconductor |
N-Channel MOSFET significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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Toshiba Semiconductor |
N-Channel MOSFET p.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating condi |
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Desde 2024. D4U Semiconductor.
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