Toshiba 10J Hoja de datos

No.	parte #	Fabricante	Descripción
1	RN2710JE	Toshiba	Silicon PNP Epitaxial Type Transistor ote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
2	F10JZ47	Toshiba Semiconductor	SILICON DIFFUSED TYPE THYRISTOR
3	SF10J41A	Toshiba Semiconductor	SILICON PLANAR TYPE THYRISTOR Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.DataSheet4U.com SF10G41A,SF
4	GT10J311	Toshiba Semiconductor	Silicon N-Channel IGBT
5	U10JL2C48A	Toshiba Semiconductor	HIGH EFFICIENCY DIODE STACK
6	10J303	Toshiba	GT10J303 icantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Pr
7	TC514410J	Toshiba	1048576 Word x 4 Bit DRAM
8	TK40X10J1	Toshiba Semiconductor	N-Channel MOSFET JEDEC ⎯ JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decreas
9	TK40A10J1	Toshiba Semiconductor	MOSFET tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin
10	GT10J303	Toshiba Semiconductor	Silicon N-Channel IGBT icantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Pr
11	GT10J312	Toshiba Semiconductor	Silicon N-Channel IGBT
12	TC514410J-80	Toshiba	DRAM
13	TK40D10J1	Toshiba Semiconductor	MOSFET urrent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage a
14	TK55D10J1	Toshiba Semiconductor	N-Channel MOSFET 50 −55 to 50 Unit V V V A W mJ A mJ °C °C 0.62±0.15 Ф0.2 M A 2.54 2.54 0.57+-00..2105 2.53±0.2 4.5±0.2 123 1: Gate 2: Drain (Heat Sink) 3: Source JEDEC - JEITA - TOSHIBA 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heav
15	TK55A10J1	Toshiba Semiconductor	N-Channel MOSFET ゲートれドレインしゃドレイン・ソースゲートしきいドレイン・ソースオンアドミタンス IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) \|Yfs\| Ciss Crss Coss VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V,
16	GT10J301	Toshiba Semiconductor	Silicon N-Channel IGBT
17	GT10J321	Toshiba Semiconductor	Silicon N-Channel IGBT olatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min GT10J321 Typ. Max ±500 Unit IG
18	TC514410J-10	Toshiba	DRAM
19	TSS10J45S	Toshiba Semiconductor	SOLID STATE AC RELAY
20	SF10J48	Toshiba Semiconductor	SILICON PLANAR TYPE THYRISTOR Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V