Toshiba 02C Hoja de datos

No.	parte #	Fabricante	Descripción
1	TV00570002CDGB	Toshiba	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS • • • Power supply voltage of 2.7 to 3.3 V Operating temperature of −30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features • • Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increme
2	02CZ15	Toshiba	Zenzer Diode
3	02CZ30	Toshiba	Zenzer Diode
4	02CZ33	Toshiba	Zenzer Diode
5	02CZ47	Toshiba	Zenzer Diode imated failure rate, etc). JEDEC JEITA TOSHIBA Weight: 0.012g TO-236MOD SC-59 1-3G1B Marking (02CZ15-X) 1 (02CZ2.4-Z) 2007-11-01 Electrical Characteristics (Ta = 25ºC) Zener Voltage Type No. * VZ (V) Min Max IZ (mA) 02CZ2.0 (**) 02CZ2.2
6	02CZ2.4	Toshiba	Zenzer Diode
7	02CZ3.0	Toshiba	Zenzer Diode
8	02CZ5.1	Toshiba	Zenzer Diode
9	02CZ12	Toshiba	Zenzer Diode
10	02CZ13	Toshiba	Zenzer Diode
11	02CZ16	Toshiba	Zenzer Diode
12	02CZ24	Toshiba	Zenzer Diode
13	02CZ39	Toshiba	Zenzer Diode
14	SSM3K7002CFU	Toshiba	Silicon N-Channel MOSFET (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assig
15	02CZ2.2	Toshiba	Zenzer Diode
16	02CZ2.7	Toshiba	Zenzer Diode
17	02CZ3.3	Toshiba	Zenzer Diode
18	02CZ3.6	Toshiba	Zenzer Diode
19	02CZ3.9	Toshiba	Zenzer Diode
20	02CZ4.3	Toshiba	Zenzer Diode