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Thinki Semiconductor |
NPN Silicon Epitaxial Power Transistor * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER |
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Thinki Semiconductor |
NPN Silicon Epitaxial Power Transistor * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER |
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Thinki Semiconductor |
NPN Silicon Epitaxial Power Transistor • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage VCB0 30 V Collector to Em |
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Thinki Semiconductor |
NPN Complementary Silicon Power Transistors z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. z Switching Applications. TO-220C COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLL |
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Desde 2024. D4U Semiconductor.
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