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TEMIC |
N-Channel MOSFET C (05/27/94) Advance Information Limit 40 80 1.8 Unit 'c{w 6-155 TEMIC SUP/SUB50N06-18 = Specifications (TJ 25°C Unless Otherwise Noted) Siliconix Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltag |
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TEMIC |
N-Channel MOSFET R)DSS Vas = Ov, 10 = 250!lA 60 Gate Threshold Voltage VaS(th) Vos = Vas, 10 = 250 !lA 2.0 Gate-Body Leakage lass Vos = OV,Vas = ±20V Vos = 48 V, Vas = OV Zero Gate Voltage Drain Current loss Vos = 48 V, Vas - 0 V, TJ = 125'C Vos = 48 V, |
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TEMIC |
P-Channel Transistor ). (05/18/94) Advance Information Limit 40 80 1.0 Unit .c{w 6-163 TEMIC SUP/SUB60P06-20 = Specifications (TJ 25°C Unless Otherwise Noted) Static Parameter Symbol Test Condition Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo |
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TEMIC Semiconductors |
PWM Power Control with Interference Suppression D Pulse-width modulation up to 2 kHz clock frequency D Protection against short circuit, load dump over –voltage and reverse VS D Interference and damage protection according to VDE 0839 and ISO/TR 7637/1. D Duty cycle 18 to 100% continuously D Inte |
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TEMIC Semiconductors |
N-Channel Enhancement-Mode Transistors ined via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283. A SPICE Model data sheet is available for this product (FaxBack document #70527). RthJA RthJC Symbol Limit 40 62.5 0.8 Unit _C/W Siliconix |
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TEMIC Semiconductors |
DC/DC Converter - Power Supply 28 V D Voltage outputs – 28.4-V step-up converter with I 1.2 A – 7-V step-down converter with I 400 mA – 5-V logic supply with I 14 mA – 5-V reference voltage with I 14 mA v v v v D Analog input VKL15 – Energy-reserve mode switches off the step-up con |
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Temic |
N-Channel Enhancement Mode Transistor |
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Desde 2024. D4U Semiconductor.
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