| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Temic |
N-Channel Enhancement Mode Transistor |
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TEMIC |
N-Channel Enhancement-Mode Transistor arameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductan |
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TEMIC |
P-Channel Transistor |
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Temic Semiconductors |
N-Channel Enhancement Mode Transistor |
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TEMIC |
N-Channel MOSFET hcs 'JYpical 1.0 Maximum 80 2.08 Unit 'CIW 6-101 TEMIC SMP25N05-45L Siliconix Specifications (TJ - 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = Ov, ID = 250 J!A |
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Desde 2024. D4U Semiconductor.
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