| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Taiwan Semiconductor Company |
(SR3020PT - SR3060PT) 30.0 AMPS. Schottky Barrier Rectifiers a a a a a a a a a Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capabil |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Taiwan Semiconductor |
Schottky Barrier Rectifier - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2- |
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Taiwan Semiconductor Company |
(SR3020PT - SR3060PT) 30.0 AMPS. Schottky Barrier Rectifiers a a a a a a a a a Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capabil |
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Taiwan Semiconductor Company |
(SR3020PT - SR3060PT) 30.0 AMPS. Schottky Barrier Rectifiers a a a a a a a a a Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capabil |
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Taiwan Semiconductor Company |
(SR3020PT - SR3060PT) 30.0 AMPS. Schottky Barrier Rectifiers a a a a a a a a a Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capabil |
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Taiwan Semiconductor Company |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 6 |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor Company |
(SR3020PT - SR30150PT) 30.0 AMPS. Schottky Barrier Rectifiers Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High s |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Taiwan Semiconductor |
3.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheelin |
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Desde 2024. D4U Semiconductor.
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