| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Silan Microelectronics |
100V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop ORDERING SPECIFICATIONS Part No. SBD20C100T SBD20C100F Package TO-220-3L TO-220F-3L Marking SBD20C100T SBD20C100F Material Pb |
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Silan Microelectronics |
45V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING INFORMATION Part No. SBD20C45T SBD20C45F Package TO-220-3L TO-220F-3L Marking S |
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Silan Microelectronics |
45V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING INFORMATION Part No. SBD20C45T SBD20C45F Package TO-220-3L TO-220F-3L Marking S |
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GME |
Schottky Barrier Rectifier z High surge capacity. z For use in low voltage,high frequency Pb Lead-free Inverters,free wheeling,and polarity protect- tion applications. z Metal silicon junction,majority carrier conduction. z High current capacity,lowforward voltage drop. |
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AP Semiconductor |
150V 20A Ultra Low VF Schottky PIN1 Case ◼ Ultra Low Forward Voltage ( VF ) Drop Low Power Losses ◼ Low Leakage Current at high temperature. ◼ Reliable application for various circumstances. ◼ 150℃ Operating Junction Temperature ◼ Lead Free Finish, RoHS Compliant Typical Appli |
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AP Semiconductor |
100V 20A Ultra Low VF Schottky Ultra Low Forward Voltage ( VF ) Drop Very Low Reverse Leakage in high temperature. Softest, fast switching capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant AD20D100F TO-220F PIN2 PIN3 Case PIN1 Typical |
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AP Semiconductor |
200V 20A Ultra Low VF Schottky Ultra Low Forward Voltage ( VF ) Drop Very Low Reverse Leakage in high temperature. Softest, fast switching capability 175℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant AD20D200F TO-220F PIN2 PIN3 Case PIN1 Typical |
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HITANO |
RESETTABLE FUSE ‧Suitable for lead free soldering. ‧Compatible with flow and reflow soldering ■ Applications ‧Consumer Electronics ‧USB hub, M/B, Modem ‧PDAs & Charger ■ Construction & Dimension ‧Analog & digital line card. ‧Digital camera, Disk drivers, CD-ROMs U |
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Cree |
Silicon Carbide Schottky Diode VRRM = 1200 V IF = 20 A Qc =130 nC Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-220-2 PIN 1 PIN 2 Benefits • • • • |
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Cree |
Silicon Carbide Schottky Diode Qc = • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • Replace Bipolar with Unipolar R |
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AP Semiconductor |
60V 20A Ultra Low VF Schottky AD2060T TO-277 PIN3 PIN2 PIN1 Case ◼ Ultra Low Forward Voltage ( VF ) Drop Low Power Losses ◼ Low Leakage Current at high temperature. ◼ Reliable application for various circumstances. ◼ 150℃ Operating Junction Temperature ◼ Lead Free Finish, |
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Infineon |
The Soft 650 V Emitter Controlled Si Diode • VRRM = 650 V • IF = 20 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualifie |
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CREE |
Silicon Carbide Schottky Diode • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • • Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benef |
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CREE |
Silicon Carbide Schottky Diode Package • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF |
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Silan Microelectronics |
40V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop * 125°C Operating Junction Temperature ORDERING SPECIFICATIONS Part No. SBD20C40T SBD20C40F Package TO-220-3L TO-220F-3L Markin |
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Sigetronics |
Schottky Barrier Diode • Anti-parallel • High Cut-off frequency • Low Series Resistance • Low Capacitance • Designed for Easy Circuit Insertion • Silicon Nitride Passivation SBD200 Dimensions Application • Mixer and Detectors • X, K and Ka Bands Transceiver • 30 GHx and |
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GME |
Schottky Barrier Rectifier z High surge capacity. z For use in low voltage,high frequency Pb Lead-free Inverters,free wheeling,and polarity protect- tion applications. z Metal silicon junction,majority carrier conduction. z High current capacity,lowforward voltage drop. |
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SMC Diode |
SCHOTTKY RECTIFIER 150 C TJ operation Center tap configuration Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedn |
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Texas Instruments |
Ultra Low-Noise JESD204B Compliant Clock Jitter Cleaner •1 JEDEC JESD204B Support • Ultra-Low RMS Jitter – 88 fs RMS Jitter (12 kHz to 20 MHz) – 91 fs RMS Jitter (100 Hz to 20 MHz) – –162.5 dBc/Hz Noise Floor at 245.76 MHz • Up to 14 Differential Device Clocks from PLL2 – Up to 7 SYSREF Clocks – Maximum C |
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Shindengen |
Schottky Barrier Diodes ・Permit high current with a small package ・Tj=175℃ ・Low IR ・Based on AEC-Q101 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FR Package (JEDEC Code): TO-252AA similar Equivalent circuit Absolute Maximum Ratings (unless otherwise specifi |
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Desde 2024. D4U Semiconductor.
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