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KD |
SMALL SIGNAL SCHOTTKY DIODE ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satis |
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ON Semiconductor |
1500 Watt MosorbE Zener Transient Voltage Transient Voltage Cathode Anode • • • • • • • Working Peak Reverse Voltage Range – 5.8 V to 214 V Peak Power – 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B f |
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Semtech Corporation |
QPL 500 Watt Axial Leaded TVS • • • • • • 500 Watts Peak Pulse Power (tp = 10/1000µs) Voidless hermetically sealed glass package Metallurgically bonded High surge capacity Military & Industrial applications Available in JAN, JTX, and JTXV versions per MIL-S-19500/516 MECHANIC |
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Compensated Deuices Incorporated |
1.5 WATT ZENER DIODES 10.0 5.0 VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.72 4.08 MA 433 397 366 332 304 280 255 230 210 VOLTS .90 .80 .75 .70 .60 .50 .40 .35 .30 AMPS 4.2 3.9 3.6 3.3 3.0 2.7 2.5 2.3 2.1 DIM D F G S MILLIMETERS MIN MAX 2.31 2.62 0.48 0.71 4.28 5.08 0.08MIN. I |
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America Semiconductor |
Silicon Power Schottky Diode |
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Littelfuse |
TVS Diodes • Working Peak Reverse Voltage Range - 5.0 V to 45 V • Peak Power - 1500 Watts @ 1 ms • ESD Rating of Class 3 (>16 KV) per Human Body Model • Low Leakage < 5 µA Above 10 V • Response Time is Typically < 1 ns • Pb-Free Packages areBi-Adviarielacbtiloe |
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Microsemi |
VOIDLESS HERMETICALLY SEALED 1.5 WATT GLASS ZENER DIODES • Popular JEDEC registered series. • Void-less hermetically sealed glass package. • Triple-layer passivation. • Extremely robust constructio |
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TRANSYS Electronics Limited |
(1N6xxx) SCHOTTKY DIODES STUD TYPE 25A High Surge Capability Types up to 40V VRRM DO-4 Maximum Ratings Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175 N M C B J Part Number 1N5829( R ) 1N5830( R ) 1N6095( R ) 1N5831( R ) 1N6096( R ) Maximum Recurrent Peak Rev |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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Microchip |
1500 Watt Bidirectional Transient Voltage Suppressor • Bidirectional TVS series in axial packages for through-hole mounting Figure 1. DO-13 (DO-202AA) Package • Suppresses transients up to 1500 W at 10/1000 µs (see Figure 3-1). • Clamps transients in less than 100 ps. • Working voltage (VWM) range |
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Microchip |
1500 Watt Bidirectional Transient Voltage Suppressor • Bidirectional TVS series in axial packages for through-hole mounting Figure 1. DO-13 (DO-202AA) Package • Suppresses transients up to 1500 W at 10/1000 µs (see Figure 3-1). • Clamps transients in less than 100 ps. • Working voltage (VWM) range |
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Microsemi |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very successfu |
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Littelfuse |
METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS q Breakdown voltage range 6.8 - 200 volts q Glass passivated junction q Excellent clamping capability q Low zener impedance q 100% surge tested q -55°C to +150°C q Hermetically sealed q Bi-directional MAXIMUM RATING q Peak Pulse Power (Ppk): 15000 Wa |
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General Semiconductor |
Schottky Diodes • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling |
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Naina Semiconductor |
(1N6095 - 1N6096R) Schottky Power Diode • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N6095 thru 1N6096R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak r |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are in switching power |
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Motorola |
SCHOTTKY BARRIER RECTIFIERS |
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Microchip |
1500 Watt Bidirectional Transient Voltage Suppressor • Bidirectional TVS series in axial packages for through-hole mounting Figure 1. DO-13 (DO-202AA) Package • Suppresses transients up to 1500 W at 10/1000 µs (see Figure 3-1). • Clamps transients in less than 100 ps. • Working voltage (VWM) range |
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Microchip |
1500 Watt Bidirectional Transient Voltage Suppressor • Bidirectional TVS series in axial packages for through-hole mounting Figure 1. DO-13 (DO-202AA) Package • Suppresses transients up to 1500 W at 10/1000 µs (see Figure 3-1). • Clamps transients in less than 100 ps. • Working voltage (VWM) range |
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Desde 2024. D4U Semiconductor.
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