No. | parte # | Fabricante | Descripción | Hoja de Datos |
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TRANSYS |
NPN EPITAXIAL PLANAR SILICON TRANSISTORS lector-Cut off Current VCB=160V, IE=0 IEBO VEB=6V, IC=0 <100 Emitter-Cut off Current VEB=4V, IC=0 hFE* IC=1mA,VCE=10V >25 DC Current Gain IC=10mA,VCE=10V >40 IC=30mA,VCE=10V >40 <0.5 Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA VBE(S |
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TRANSYS |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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TRANSYS |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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TRANSYS |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS Current BVCEO * BVCBO BVEBO ICBO VCB=50V, IE = 0 VCB=50V, IE = 0, Collector-Cut off Current Collector-Cut off Current Emitter Cut off Current Base Cut off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain hF |
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TRANSYS |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS Current BVCEO * BVCBO BVEBO ICBO VCB=50V, IE = 0 VCB=50V, IE = 0, Collector-Cut off Current Collector-Cut off Current Emitter Cut off Current Base Cut off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain hF |
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TRANSYS |
NPN EPITAXIAL PLANAR SILICON TRANSISTORS lector-Cut off Current VCB=160V, IE=0 IEBO VEB=6V, IC=0 <100 Emitter-Cut off Current VEB=4V, IC=0 hFE* IC=1mA,VCE=10V >25 DC Current Gain IC=10mA,VCE=10V >40 IC=30mA,VCE=10V >40 <0.5 Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA VBE(S |
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