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TRANSYS Electronics |
Plastic-Encapsulated Transistors Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdo |
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TRANSYS Electronics |
PNP Transistor Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF w.DataSheet4U.com 150 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current -100 mA ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junct |
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TRANSYS Electronics Limited |
Plastic-Encapsulate Transistors Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ |
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Desde 2024. D4U Semiconductor.
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