TRANSYS BD1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD179	TRANSYS	EPITAXIAL SILICON POWER TRANSISTORS
2	BD115	TRANSYS	NPN Silicon Transistor ICBO IEBO VCE(Sat) * VBE(on) * hFE TEST CONDITION IC=1mA,IB=0 IC=100µA, IE=0 IE=100µA, Ic=0 VCB=200V, IE=0 VCB=200V,IE=0,Tj=200ºC VEB=5V, IC=0 IC=100mA,IB=10mA IC=50mA,VCE=100V IC=50mA,VCE=100V MIN 180 245 5 UNITS V V V nA µA µA V V 15 550 100 3
3	BD176	TRANSYS	EPITAXIAL SILICON POWER TRANSISTORS
4	BD175	TRANSYS	EPITAXIAL SILICON POWER TRANSISTORS
5	BD180	TRANSYS	EPITAXIAL SILICON POWER TRANSISTORS
6	BD177	TRANSYS	EPITAXIAL SILICON POWER TRANSISTORS
7	BD178	TRANSYS	EPITAXIAL SILICON POWER TRANSISTORS