| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
Intelligent Power Module • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • The level shift circuit by high-voltage IC is built in. • The simplification of a high side driver power supply is possible by the bootstrap system. • Short circuit |
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TOSHIBA |
GT20J321 iode) Symbol Rth (j-c) Rth (j-c) Max 2.78 4.23 Unit °C/W °C/W ww.DataSheet4U.com Equivalent Circuit Collector Gate Emitter 1 www.DataSheet4U.com 2002-04-08 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www. |
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Toshiba Semiconductor |
N-Channel MOSFET 0.6 －0.1 123 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in |
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Toshiba Semiconductor |
Silicon N-Channel IGBT = 0 VCE = 600 V, VGE = 0 IC = 2 mA, VCE = 5 V IC = 20 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 20 A VGG = ±15 V, RG = 56 Ω (Note1) Min 5.0 Typ. 2.1 1450 0.12 0.40 0.15 0.50 Max ±500 1.0 8.0 2.7 U |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
TK20J60U 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperatur |
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Toshiba Semiconductor |
Silicon N-Channel IGBT ) Rth (j-c) Max 2.78 4.23 Unit °C/W °C/W ww.DataSheet4U.com Equivalent Circuit Collector Gate Emitter 1 www.DataSheet4U.com 2002-04-08 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www.DataSheet4U.com GT20 |
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Toshiba |
Silicon N-Channel IGBT (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-220SIS 1 2012-04-26 Rev.2.0 Free Datasheet h |
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Toshiba |
Photocoupler Photorelay (1) Normally open (1-Form-A) (2) OFF-state output terminal voltage: 600 V (min) (3) Trigger LED current: 2 mA (max) (4) ON-state current: 90 mA (max) (5) ON-state resistance: 40 Ω (max, t < 1s) (6) ON-state resistance: 60 Ω (max, Continuous) (7) Isol |
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Toshiba |
Photocoupler Photorelay (1) Normally open (1-Form-A) (2) OFF-state output terminal voltage: 600 V (min) (3) Trigger LED current: 2 mA (max) (4) ON-state current: 90 mA (max) (5) ON-state resistance: 40 Ω (max, t < 1s) (6) ON-state resistance: 60 Ω (max, Continuous) (7) Isol |
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ToshibaSemiconductor |
DIODE |
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ToshibaSemiconductor |
DIODE |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba |
Integrated IGBT Module Silicon N-Channel IGBT |
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Toshiba |
Integrated IGBT Module Silicon N-Channel IGBT |
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Toshiba |
Integrated IGBT Module Silicon N-Channel IGBT |
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Desde 2024. D4U Semiconductor.
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