| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● |
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TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● |
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Desde 2024. D4U Semiconductor.
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