| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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TEMIC |
P-Channel Enhancement-Mode MOS Transistors D HighĆSide Switching D Secondary Breakdown Free: -220 V D Low OnĆResistance: 11.5 W D LowĆPower/Voltage Driven D Excellent Thermal Stability Benefits D Ease in Driving Switches D FullĆVoltage Operation D Low Offset Voltage D Easily Driven Without B |
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Desde 2024. D4U Semiconductor.
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