TE ZEN Hoja de datos

No.	parte #	Fabricante	Descripción
1	9V1BSC	SEMTECH	SILICON PLANAR ZENER DIODES ) (Ω) at lZT lZT (mA) IR (µA) Max. VR (V) 2V0BS 1.88 2.2 2V0BSA 1.88 2.1 5 100 5 120 0.5 2V0BSB 2.02 2.2 2V2BS 2.12 2.41 2V2BSA 2.12 2.3 5 100 5 120 0.7 2V2BSB 2.22 2.41 2V4BS 2.33 2.63 2V4BSA 2.33 2.52 5 100 5 120
2	1N4748	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
3	1N4460	EIC discrete Semiconductors	(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51)
4	1N4460	Compensated Deuices Incorporated	1.5 WATT ZENER DIODES 600 200 200 mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 µA 50 50 35 5.0 4.0 1.0 0.5 10.0 5.0 VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.72 4.08 MA 433 397 366 332 304 280 255 230 210 VOLTS .90 .80 .75 .70 .60 .50 .40 .35 .30 AMPS 4.2 3.9 3.6 3.3 3.0 2.7 2.5 2.3
5	1N4567	Digitron Semiconductors	6.4V TEMPERATURE COMPENSATED ZENER DIODE  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Operating an
6	1N4463	EIC discrete Semiconductors	(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51)
7	Z2SMF36	SunMate	SILICON ZENER DIODES ! Complete Voltage Range 3.6 to 200 Volts ! High peak reverse power dissipation ! High reliability ! Low leakage current Mechanical Data ! Case: SOD-123FL plastic body over passivated junction ! Terminals : Plated axial leads, ! solderable per MIL-ST
8	ZMD8.2	Diotec	SMD Zener Diodes High power dissipation VZ up to 100 V Compliant to RoHS, REACH, Conflict Minerals 1) WEEE RoHS Pb Besonderheiten Hohe Leistungsfähigkeit VZ bis zu 100 V Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped
9	Z2SMB15	SunMate	SURFACE MOUNT SILICON ZENER DIODES ! Complete Voltage Range 3.6 to 200 Volts ! High peak reverse power dissipation ! High reliability ! Low leakage current Mechanical Data ! Case: SMB/DO-214AA, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polari
10	1N5359B	Diodes Incorporated	5W ZENER DIODE · · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal VZ is Standard 100% Tested A B A D C Mechanical Data · · · · Case: Molded Plastic Over Glass Passivated Junct
11	1N4735A	Dc Components	TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES * Voltage Range:3.3V to 39V * Double slug type construction DO-41(G) MECHANICAL DATA * Case: Glass sealed case * Lead: MIL-STD-202E, Method 208 guaranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.35 gram MAX.
12	Z2SMBF8V2	SunMate	SURFACE MOUNT SILICON ZENER DIODES ! Complete Voltage Range 3.6 to 200 Volts ! High peak reverse power dissipation ! High reliability ! Low leakage current Mechanical Data ! Case:SMBF , Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cath
13	2.0HSA	SemtechCorporation	SILICONPLANARZENERDIODE
14	A3S64D40GTP	Zentel	64M Double Data Rate Synchronous DRAM - Vdd=VddQ=2.5V+0.2V (-50) - Double data rate architecture ; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock input (CLK and /CLK) - DLL aligns DQ and DQS transitions with CL
15	A3S28D40FTP	Zentel	128M Double Data Rate Synchronous DRAM - Vdd=VddQ=2.5V+0.2V (-4, -5E, -5) - Double data rate architecture ; two data transfers per clock cycle. - Bidirectional , data strobe (DQS) is transmitted/received with data - Differential clock input (CLK and /CLK) - DLL aligns DQ and DQS transitio
16	A3R12E40CBF	Zentel	512Mb DDRII Synchronous DRAM • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data fo
17	Z2SMB180	SunMate	SURFACE MOUNT SILICON ZENER DIODES ! Complete Voltage Range 3.6 to 200 Volts ! High peak reverse power dissipation ! High reliability ! Low leakage current Mechanical Data ! Case: SMB/DO-214AA, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polari
18	2.7HSB	SemtechCorporation	SILICONPLANARZENERDIODE
19	CD4101	Compensated Deuices Incorporated	ZENER DIODE CHIPS µ A 10.0 10.0 1.0 1.0 1.0 1.0 .05 .05 .05 .05 .05 .05 .05 .05 .05 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 VOLTS 5.17 5.70 6.24 6.61 6.92 7.60 8.44 9.12 9.87 10.65 11.40 12.15 12.92 13.67 14.44 15.20 1
20	6.2HS	Semtech Corporation	SILICON PLANAR ZENER DIODE